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                用于平面钙钛矿太阳龍神之鎧能电池的由气相生长MAPbI3−xClx制备的原▽子层沉积TiO2

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                发表于 2019-1-2 14:01:23 | 显示全部楼♀层 |阅读模式
                Atomic-layer-deposited TiO2 with vapor-grown MAPbI3−xClx for planar perovskite solar cells
                用于平面钙钛矿太阳能电池的由气相生长MAPbI3−xClx制备的原子层男子沉积TiO2

                Journal of Vacuum Science & Technology A 37, 010902 (2019);



                Sungjae Na1, Sayah Lee2, Won-Gyu Choi1, Chan-Gyu Park1, Sang Ouk Ryu2,a), and Taeho Moon1,b)
                Hide Affiliations
                1Department of Materials Science and Engineering, Dankook University, Cheonan 31116, South Korea
                2Department of Electronics and Electrical Engineering, Dankook University, Yongin 16890, South Korea
                a)Electronic mail: ryuso@dankook.ac.kr
                b)Electronic mail: taehom@dankook.ac.kr

                ABSTRACT
                摘要

                TiO2 thin films as electron-transporting layers for planar-type perovskite solar cells were prepared by atomic layer deposition (ALD). Perovskite MAPbI3−xClx thin films were formed on the ALD TiO2 by sequential vapor processing. The resulting perovskitethin films were uniform and pinhole-free, with an average grain size of ~370 nm. The high crystallinity of the perovskite layers was also confirmed, with an optical bandgap of ~1.58 eV. Planar n-i-psolar cells were formed using the ALD TiO2 and vapor-grown perovskite. The deposition temperature and thickness of the ALD TiO2 were optimized, resulting in a superior efficiency of ~11.6% compared to conventional TiO2.

                        通过原子层沉积(ALD)制备了作为平面型钙钛矿太阳能电池的电竟然敢趁火打劫子传输层的TiO2薄膜。通过←顺序蒸汽处理在ALD TiO2上形成钙钛矿MAPbI3−xClx薄膜。所得╱到的钙钛矿薄膜均匀且无针孔,平均晶粒尺〒寸为~370nm。还证实了钙钛矿层的高结晶度,光学带隙∏为~1.58eV。使用ALD TiO2和气相生长的輝使者和耀使者一起抓住了血紅衣钙钛矿形成平面n-i-p型太阳〓能电池。优化了ALD TiO2的沉积温度和厚度,与常规TiO2相比,其∏效率更高,可达~11.6%


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